BAS116 datasheet(1/4 Pages) TSC

部件名	BAS116

功能描述	225mW, SMD Switching Diode

PDF	4 Pages

Scroll/Zoom	100%

制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

标志

1 / 4 page

- Low power loss, high current capability, low VF

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with

Nickel (Ni) under plate

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 8 mg (approximately)

- Marking Code: JV

SYMBOL

UNIT

PD

mW

VRRM

V

IO

mA

IFSM

mA

RθJA

°C/W

TJ , TSTG

°C

SYMBOL

UNIT

VBR

V

CJ

pF

trr

ns

Notes : 1. Valid provided that electrodes are kept at ambient temperature

Document Number: DS_S1412037

Version: D15

Thermal Resistance (Junction to Ambient) (Note 1)

Non-Repetitive Peak Forward Surge Current @ t = 1.0 s

Mean Forward Current

Repetitive Peak Reverse Voltage

Power Dissipation

-55 to +150

330

500

200

75

-

2. Reverse recovery test conditions : IF=10mA , IR=10mA , RL=100 Ω, IRR= 1mA

3.0

Reverse Recovery Time

(Note 2)

-2.0

V

75

MIN

Junction and Storage Temperature Range

PARAMETER

MAX

-

Reverse Breakdown Voltage

IR = 100 μA

225

-

-1.0

0.9

VF

-

-1.25

1.1

Junction Capacitance

Forward Voltage

IF = 150 mA

IF = 50 mA

IF = 10 mA

IF = 1 mA

VR = 0 V , f = 1.0 MHz

Reverse Leakage Current

PARAMETER

VALUE

SOT-23

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

BAS116

Taiwan Semiconductor

Small Signal Product

225mW, SMD Switching Diode

FEATURES

nA

VR = 75 V

TJ=25°C

TJ=150°C

IR

-

80

5

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