MBR3045CT datasheet(1/6 Pages) VISHAY

部件名	MBR3045CT

功能描述	Dual Common Cathode Schottky Rectifier

PDF	6 Pages

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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MBR30x5CT, MBRF30x5CT, MBRB30x5CT

www.vishay.com

Vishay General Semiconductor

Revision: 11-Jun-13

1

Document Number: 88677

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual Common Cathode Schottky Rectifier

FEATURES

• Power pack

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB and ITO-220AB package)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode

power

supplies,

freewheeling

diodes,

DC/DC

converters, and polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade



Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

2 x 15 A

VRRM

35 V to 45 V

IFSM

200 A

VF

0.60 V

TJ max.

150 °C

Package

TO-220AB, ITO-220AB, TO-263AB

Diode variations

Common cathode

TO-263AB

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR30x5CT

ITO-220AB

MBRF30x5CT

MBRB30x5CT

PIN 1

PIN 2

K

HEATSINK

1

2

3

1

2

K

PIN 2

PIN 1

PIN 3

1

2

3

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR3035CT

MBR3045CT

UNIT

Maximum repetitive peak reverse voltage

VRRM

35

45

V

Working peak reverse voltage

VRWM

35

45

Maximum DC blocking voltage

VDC

35

45

Maximum average forward rectified current

total device

IF(AV)

30

A

per diode

15

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

IFSM

200

Peak repetitive reverse current per diode at tp = 2.0 μs, 1 kHz

IRRM

2.0

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Operating junction temperature range

TJ

- 65 to + 150

°C

Storage temperature range

TSTG

- 65 to + 175

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

VAC

1500

V

类似零件编号 - MBR3045CT

制造商	部件名	数据表	功能描述
Micro Commercial Compon...	MBR3045CT	134Kb / 2P	30 Amp Rectifier 30 to 60 Volts Schottky Barrier
Microsemi Corporation	MBR3045CT	131Kb / 2P	30 AMP SCHOTTKY BARRIER RECTIFIER
Vishay Siliconix	MBR3045CT	46Kb / 3P	Dual Schottky Rectifiers 02-Oct-02
List of Unclassifed Man...	MBR3045CT	88Kb / 2P	High Tjm Schottky Barrier Diodes
Taiwan Semiconductor Co...	MBR3045CT	101Kb / 2P	30.0 AMPS. Schottky Barrier Rectifiers

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类似说明 - MBR3045CT

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