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LT1122AC 数据表(PDF) 2 Page - Linear Technology |
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LT1122AC 数据表(HTML) 2 Page - Linear Technology |
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2 / 8 page  2 LT1122 Supply Voltage .................................................... ± 20V Differential Input Voltage ...................................... ± 40V Input Voltage ........................................................ ± 20V Output Short Circuit Duration .......................... Indefinite Lead Temperature (Soldering, 10 sec.)................. 300 °C Operating Temperature Range LT1122AM/BM/CM/DM .................... – 55 °C to 125°C LT1122AC/BC/CC/DC/CS/DS .............. – 40 °C to 85°C Storage Temperature Range All Devices ....................................... – 65 °C to 150°C PACKAGE/ORDER I FOR ATIO LT1122AMJ8 LT1122CCJ8 LT1122BMJ8 LT1122DCJ8 LT1122CMJ8 LT1122ACN8 LT1122DMJ8 LT1122BCN8 LT1122ACJ8 LT1122CCN8 LT1122BCJ8 LT1122DCN8 ORDER PART NUMBER ORDER PART NUMBER LT1122CS8 LT1122DS8 PART MARKING 1122C 1122D A G A U A R BSOLUTEXI TI S 8 7 6 5 4 3 2 1 V TRIM –IN +IN V V TRIM OUT + V SPEED BOOST/ OVERCOMP TOP VIEW N8 PACKAGE 8-LEAD PLASTIC DIP – OS OS LT1122 J8 PACKAGE 8-LEAD HERMETIC DIP TJMAX = 150°C, θJA = 130°C/W (N8) TJMAX = 175°C, θJA = 100°C/W (J8) 8 7 6 5 4 3 2 1 –IN V TRIM +IN – V TRIM OUT OS V SPEED BOOST/ OVERCOMP TOP VIEW S8 PACKAGE 8-LEAD PLASTIC SOIC + OS V LT1122 TJMAX = 150°C, θJA = 190°C/W Consult factory for Industrial grade parts. ELECTRICAL C C HARA TERISTICS VS = ± 15V, TA = 25°C, VCM = 0V unless otherwise noted. (Note 1) LT1122CM/DM LT1122AM/BM LT1122CC/DC LT1122AC/BC LT1122CS/DS SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS VOS Input Offset Voltage 120 600 130 900 µV IOS Input Offset Current 4 40 5 50 pA IB Input Bias Current 10 75 12 100 pA Input Resistance Differential 1012 1012 Ω Common Mode VCM = – 10V to + 8V 1012 1012 Ω VCM = + 8V to + 11V 1011 1011 Ω Input Capacitance 44 pF SR Slew Rate AV = – 1 60 80 50 75 V/ µs Settling Time (Note 2) + 10V to 0V, – 10V to 0V 100% Tested: A and C Grades to 1mV at Sum Node 340 540 350 590 ns B and D Grades to 1mV at Sum Node 350 360 ns All Grades to 0.5mV at Sum Node 450 470 ns GBW Gain Bandwidth Product 14 13 MHz Power Bandwidth VOUT = 20Vp-p 1.2 1.1 MHz AVOL Large Signal Voltage Gain VOUT = ± 10V, RL = 2kΩ 180 500 150 450 V/mV VOUT = ± 10V, RL = 600Ω 130 250 110 220 V/mV CMRR Common Mode Rejection Ratio VCM = ± 10V 83 99 80 98 dB Input Voltage Range (Note 3) ± 10.5 ± 11 ± 10.5 ± 11 V PSRR Power Supply Rejection Ratio VS = ± 10V to ± 18V 86 103 82 101 dB Input Noise Voltage 0.1Hz to 10Hz 3.0 3.3 µVP-P Input Noise Voltage Density fO = 100Hz 25 27 nV/ √Hz fO = 10kHz 14 15 nV/ √Hz Input Noise Current Density fO = 100Hz, fO = 10kHz 2 2 fA/ √Hz |
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