MBRF1060CT datasheet(1/4 Pages) TSC

部件名	MBRF1060CT

功能描述	Dual Common Cathode Schottky Rectifier

PDF	4 Pages

Scroll/Zoom	100%

制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

标志

1 / 4 page

CREAT BY ART

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- UL Recognized File # E-326243

- Halogen-free according to IEC 61249-2-21 definition

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

VRRM

35

45

50

60

90

100

150

200

V

VRMS

24

31

35

42

63

70

105

140

V

VDC

35

45

50

60

90

100

150

200

V

IF(AV)

A

IRRM

A

dV/dt

V/μs

RθJC

OC/W

TJ

OC

TSTG

OC

Document Number: D1308015

Version: L13

MBRF1035CT thru MBRF10200CT

Dual Common Cathode Schottky Rectifier

FEATURES

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

MBRF

10150

CT

MBRF

10200

CT

UNIT

ITO-220AB

A

MECHANICAL DATA

Case:

ITO-220AB

Polarity:

As marked

Mounting torque:

5 in-lbs maximum

Weight:

1.7 g (approximately)

A

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

10

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

Maximum repetitive peak reverse voltage

MBRF

1060

CT

MBRF

1090

CT

MBRF

10100

CT

0.70

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

IFRM

10

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

IFSM

120

Maximum reverse current @ rated VR

TJ=25 ℃

TJ=125 ℃

IR

mA

V

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

IF= 5 A, TJ=25℃

IF= 5 A, TJ=125℃

IF= 10 A, TJ=25℃

IF= 10 A, TJ=125℃

VF

Voltage rate of change (Rated VR)

10000

Typical thermal resistance

3.5

Operating junction temperature range

- 55 to +150

Storage temperature range

- 55 to +150

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Taiwan Semiconductor

PARAMETER

SYMBOL

MBRF

1035

CT

MBRF

1045

CT

MBRF

1050

CT

0.85

0.88

0.80

0.85

0.88

0.57

0.65

0.75

0.78

15

10

5

0.1

0.80

0.90

0.95

0.98

0.67

0.75

类似零件编号 - MBRF1060CT

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