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MBRF3045CT 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBRF3045CT 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() CREAT BY ART - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM 35 45 50 60 90 100 150 200 V VRMS 24 31 35 42 63 70 105 140 V VDC 35 45 50 60 90 100 150 200 V IF(AV) A IRRM A dV/dt V/μs RθJC OC/W TJ OC TSTG OC Document Number: DS_D1308022 Version: L13 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Typical thermal resistance 4 mA 20 15 Voltage rate of change (Rated VR) 10000 10 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 0.2 Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ IF=30A, TJ=25℃ IF=30A, TJ=125℃ VF V 0.70 0.75 0.84 0.95 0.82 0.90 0.94 1.05 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse surge current (Note 1) IFRM 30 0.73 0.78 0.82 0.92 0.60 0.65 0.70 0.80 MBRF 30200 CT UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage 10.5 Maximum DC blocking voltage Maximum average forward rectified current 30 Peak repetitive forward current (Rated VR, Square wave, 20KHz) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBRF 3035 CT MBRF 3045 CT MBRF 3050 CT MBRF 3060 CT MBRF 3090 CT MBRF 30100 CT MBRF 30150 CT ITO-220AB MECHANICAL DATA Case: ITO-220AB Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.7 g (approximately) MBRF3035CT thru MBRF30200CT Taiwan Semiconductor Dual Common Cathode Schottky Rectifier FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
类似零件编号 - MBRF3045CT |
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类似说明 - MBRF3045CT |
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