13.03.2012

QL65D6SA

1 of 3

QL65D6SA

TECHNICAL DATA

Red Laser Diode

Features

•

InGaAlP laser diode

•

Peak Wavelength: 650 nm

•

Optical Ouput Power: 5 mW

•

Package: 5.6 mm, with Photo Diode

Electrical Connection

Pin Configuration

Bottom View

m-type

PIN

Function

1

LD Cathode

2

LD Anode, PD Cathode

3

PD Anode

Item

Symbol

Value

Unit

Optical Output Power

7

mW

LD Reverse Voltage

2

V

PD Reverse Voltage

30

V

Operating Case Temperature

-10 … +60

°C

Storage Temperature

-40 … +85

°C

Item

Symbol

Min.

Typ.

Max.

Unit

Optical Specifications

Optical Output Power (CW)

-

5

-

mW

Peak Wavelength

650

655

660

nm

FWHM Beam Divergence

7.0

8.5

10.0

deg

26

28

32

deg

Emission Point Accuracy

Angle

-

-

±1.5

deg

-

-

±2.5

deg

KINK

K-LI

-

-

10

%

Astigmatism

-

-

10

µm

Optical Distance

ΔX,ΔY,ΔZ

-

-

±60

µm

Electrical Specifications

Threshold Current

-

30

45

mA

Operating Current

-

40

55

mA

Slope Efficiency

η

0.4

0.5

0.8

W/A

Operating Voltage

-

2.2

2.6

V

Monitor Current

0.1

0.2

0.5

mA

PD Dark Current

-

5

10

nA

PD Capacitance

Ct

-

-5

-10

pF

The above specifications are for reference purpose only and subjected to change without prior notice.