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SF3003PT 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 SF3003PT
功能描述  Glass Passivated Super Fast Rectifiers
PDF  4 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

SF3003PT 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Dual rectifier construction, positive center-tap
- Glass passivated chip junctions
- Superfast recovery time, high voltage
- Low forward voltage, high current capability
- Low thermal resistance
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
50
100
150
200
300
400
600
V
VRMS
35
70
105
140
210
280
420
V
VDC
50
100
150
200
300
400
600
V
IF(AV)
A
Trr
ns
Cj
pF
RθJC
OC/W
TJ
OC
TSTG
OC
Document Number: DS_D1401017
Version: G14
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Polarity:
As marked
SF3001PT thru SF3008PT
Taiwan Semiconductor
Glass Passivated Super Fast Rectifiers
FEATURES
SF
3001
PT
SF
3002
PT
SF
3003
PT
SF
3004
PT
SF
3005
PT
TO-247AD (TO-3P)
SF
3006
PT
SF
3008
PT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque:
10 in-lbs maximum
Weight:
5.6g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Maximum reverse recovery time (Note 2)
SYMBOL
Maximum DC blocking voltage
Maximum average forward rectified current
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
300
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
A
Maximum instantaneous forward voltage (Note 1)
IF= 15 A
VF
1.7
V
Typical thermal resistance
1.0
Operating junction temperature range
175
- 55 to +150
Storage temperature range
- 55 to +150
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Recover to 0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 1: Pulse Test with PW=300 μs, 1% Duty Cycle
0.95
1.3
10
500
μA
35
Typical junction capacitance (Note 3)


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