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LT1920 数据表(PDF) 2 Page - Linear Technology |
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LT1920 数据表(HTML) 2 Page - Linear Technology |
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2 / 12 page  2 LT1920 ABSOLUTE MAXIMUM RATINGS ORDER PART NUMBER PACKAGE/ORDER INFORMATION LT1920CN8 LT1920CS8 LT1920IN8 LT1920IS8 S8 PART MARKING 1920 1920I 1 2 3 4 8 7 6 5 TOP VIEW RG –IN +IN –VS RG +VS OUTPUT REF N8 PACKAGE 8-LEAD PDIP S8 PACKAGE 8-LEAD PLASTIC SO + – TJMAX = 150°C, θJA = 130°C/ W (N8) TJMAX = 150°C, θJA = 190°C/ W (S8) (Note 1) Supply Voltage ...................................................... ±20V Differential Input Voltage (Within the Supply Voltage) ..................................................... ±40V Input Voltage (Equal to Supply Voltage) ................ ±20V Input Current (Note 3) ........................................ ±20mA Output Short-Circuit Duration .......................... Indefinite Operating Temperature Range ................ – 40 °C to 85°C Specified Temperature Range LT1920C (Note 4) .................................... 0 °C to 70°C LT1920I .............................................. – 40 °C to 85°C Storage Temperature Range ................. – 65 °C to 150°C Lead Temperature (Soldering, 10 sec).................. 300 °C Consult factory for Military grade parts. ELECTRICAL CHARACTERISTICS V S = ± 15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted. SYMBOL PARAMETER CONDITIONS (Note 6) MIN TYP MAX UNITS G Gain Range G = 1 + (49.4k/RG) 1 10k Gain Error G = 1 0.008 0.1 % G = 10 (Note 2) 0.010 0.3 % G = 100 (Note 2) 0.025 0.3 % G = 1000 (Note 2) 0.040 0.35 % G/T Gain vs Temperature G < 1000 (Note 2) q 20 50 ppm/ °C Gain Nonlinearity (Note 5) VO = ±10V, G = 1 10 ppm VO = ±10V, G = 10 and 100 10 30 ppm VO = ±10V, G = 100 and 1000 20 ppm VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage G = 1000, VS = ±5V to ±15V 30 125 µV G = 1000, VS = ±5V to ±15V q 185 µV VOSI/T Input Offset Drift (RTI) (Note 3) q 1 µV/°C VOSO Output Offset Voltage G = 1, VS = ±5V to ±15V 400 1000 µV G = 1, VS = ±5V to ±15V q 1500 µV VOSO/T Output Offset Drift (Note 3) q 515 µV/°C IOS Input Offset Current 0.3 1 nA IB Input Bias Current 0.5 2 nA en Input Noise Voltage, RTI 0.1Hz to 10Hz, G = 1 2.00 µVP-P 0.1Hz to 10Hz, G = 10 0.50 µVP-P 0.1Hz to 10Hz, G = 100 and 1000 0.28 µVP-P Total RTI Noise = √e ni 2 + (eno/G)2 eni Input Noise Voltage Density, RTI fO = 1kHz 7.5 nV/ √Hz eno Output Noise Voltage Density, RTI fO = 1kHz 67 nV/ √Hz in Input Noise Current fO = 0.1Hz to 10Hz 10 pAP-P Input Noise Current Density fO = 10Hz 124 fA/ √Hz RIN Input Resistance VIN = ±10V 200 G Ω CIN(DIFF) Differential Input Capacitance fO = 100kHz 1.6 pF |
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