MMBT3904LP_15 datasheet(4/7 Pages) DIODES

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MMBT3904LP

Document number: DS31835 Rev. 5 - 2

4 of 7

www.diodes.com

May 2015

MMBT3904LP

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO



IC = 10µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO



IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

6.0



IE = 10µA, IC = 0

Collector Cutoff Current

ICEX



VCE = 30V, VEB(OFF) = 3.0V

Base Cutoff Current

IBL



VCE = 30V, VEB(OFF) = 3.0V

ON CHARACTERISTICS (Note 9)

DC Current Gain

hFE

100



300



IC = 100µA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(sat)



0.20

0.30

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(sat)

0.65



0.85

0.95

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo



4.0

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo



8.5

VEB = 0.5V, f = 1.0MHz, IC = 0

Input Impedance

hie

1.0

Ω

VCE = 10V, IC = 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

hre

0.5

8.0

x 10

-4

Small Signal Current Gain

hfe

100

400



Output Admittance

hoe

1.0

µS

Current Gain-Bandwidth Product

300



MHz

VCE = 20V, IC = 10mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time



VCC = 3.0V, IC = 10mA,

VBE(off) = - 0.5V, IB1 = 1.0mA

Rise Time



Storage Time



200

VCC = 3.0V, IC = 10mA,

IB1 = IB2 = 1.0mA

Fall Time



Note:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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