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1N5259B 数据表(PDF) 6 Page - Taiwan Semiconductor Company, Ltd |
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1N5259B 数据表(HTML) 6 Page - Taiwan Semiconductor Company, Ltd |
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6 / 8 page ![]() Vz @ Izt Current ZZT @ IZT IR @ VR Voltage IZT ΩΩ μA Nominal (mA) Max. Max. Max. (Volts) 1N5257B 33 3.8 58 700 0.1 25 1N5258B 36 3.4 70 700 0.1 27 1N5259B 39 3.2 80 800 0.1 30 1N5260B 43 3.0 93 900 0.1 33 1N5261B 47 2.7 105 1000 0.1 36 1N5262B 51 2.5 125 1100 0.1 39 1N5263B 56 2.2 150 1300 0.1 43 Notes: 1. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on price, availability and delivery. 2. The zener voltage(VZ) is tested under pulse condition. The measured VZ is guaranteed to be within specification with device junction in thermal equilibrium. 3. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current (IZT) is superimposed to IZT. Document Number: DS_S1410003 Version: E14 ZZK @IZK=0.25mA 1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product Device VR |
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