LLDB3 datasheet(1/5 Pages) TSC

部件名	LLDB3

功能描述	150mW Bi-directional Trigger Diode

PDF	5 Pages

Scroll/Zoom	100%

制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

标志

1 / 5 page

- Case: Mini-MELF package

- High temperature soldering guaranteed: 260°C/10s

- Weight: 29 ± 2.5 mg

- Terminal: Pure tin plated, lead free,

solderable per MIL-STD-202, method 208 guaranteed

- Pb free and RoHS compliant

IFRM

A

PD

mW

RθJA

oC/W

TJ, TSTG

oC

Notes: Valid provided that electrodes are kept at ambient temperature

SYMBOL

MIN

TYP

MAX

UNIT

28

32

36

30

32

34

±3

±2

5

9

VO

5

V

IB

10

µA

100

-

15

Document Number: DS_S1407002

- Surface mounted device

- All external surfaces are corrosion resistant and

terminals are readily solderable

Mini-MELF (LL34)

Hermetically Sealed Glass

Notes: Test Circuit

VB = 0.5VBO (Max)

400

- 40 to + 125

Break-Over Current

LLDB3

Thermal Resistance (Junction to Ambient)

(Note)

Output Voltage

Version: D14

150

Power Dissipation

Leakage Current

LLDB3TG

VBO

PARAMETER

TEST CONDITION

Small Signal Product

150mW Bi-directional Trigger Diode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25

℃ unless otherwise noted)

VALUE

UNIT

MECHANICAL DATA

PARAMETER

SYMBOL

LLDB3/ LLDB3TG

FEATURES

Break-Over Voltage

LLDB3

- Hermetically sealed glass

- Matte Tin(Sn) terminal finish

Taiwan Semiconductor

(Note)

Repetitive Peak Forward Current

Pulse Width = 20µs

2

Junction and Storage Temperature Range

LLDB3TG

IBO to IF=10mA

Dynamic Breakdown Voltage

△V

V

C=22nF

V

LLDB3

LLDB3TG

IBO

C=22nF

µA

Break-Over Voltage Symmetry

+ / -VBO

C=22nF

V

LLDB3

类似零件编号 - LLDB3

制造商	部件名	数据表	功能描述
Formosa MS	LLDB3	410Kb / 4P	DIAC
SEMTECH ELECTRONICS LTD...	LLDB3	166Kb / 1P	SILICON BIDIRECTIONAL DIACS
Jinan Jingheng (Group) ...	LLDB3	63Kb / 2P	SILICON BIDIRECTIONAL DIAC
Taiwan Semiconductor Co...	LLDB3	89Kb / 2P	150mW Bi-directional Trigger Diode
Rectron Semiconductor	LLDB3	179Kb / 4P	TRIGGER DIODES

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类似说明 - LLDB3

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