SA11 datasheet(2/6 Pages) TSC

2 / 6 page

CREAT BY ART

(TA=25

oC unless otherwise noted)

Document Number: DS_D1406029

Version: I14

SA SERIES

Taiwan Semiconductor

RATINGS AND CHARACTERISTICS CURVES

100

125

100

125

150

175

200

TEMPERATURE, (oC)

FIG.2- POWER DERATING CURVE

100

NUMBER OF CYCLES AT 60 Hz

FIG. 4- MAXIMUM NON-REPETITIVE FORWARD SURGE

CURRENT UNIDIRECTIONAL ONLY

8.3ms Single Half Sine Wave

100

150

0.0

1.0

2.0

3.0

4.0

t, TIME ms

FIG. 3- CLAMPING POWER PULSE WAVEFORM

Peak Value

IPPM

tr=10μs

Half Value-IPPM/2

10/1000μs, WAVEFORM

as DEFINED by R.E.A.

PULSE WIDTH(td) is DEFINED

as the POINT WHERE the PEAK

CURRENT DECAYS

to 50% OF IPPM

100

1000

10000

100

1000

V(BR), BREAKDOWN VOLTAGE. VOLTS

FIG. 5- TYPICAL JUNCTION CAPACITANCE

(UNIDIRECTIONAL)

f=1.0MHz

Vsig=50mVp-p

VR=0

MEASURED at

STAND-OFF

VOLTAGE,VWM

0.01

0.1

100

1,000

10,000

tp, PULSE WIDTH, sec

FIG. 1- PEAK PULSE POWER RATING CURVE

NON-REPETITIVE

PULSE WAVEFORM

SHOWN in FIG.3

IMPULSE

EXPONENTIAL

DECAY

HALF SINE

SQUARE

PPK".5"

PPK

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