DICE/DWF SPECIFICATION

2

RH1016

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

© LINEAR TECHNOLOGY CORPORATION 2008

LT 1008 • PRINTED IN USA

Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus

packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information

on dice performance and lot qualifications via lot sampling test procedures.

Dice data sheet subject to change. Please consult factory for current revision in production.

I.D.No. 66-13-1016

Rad Hard die require special handling as compared to standard IC chips.

Rad Hard die are susceptible to surface damage because there is no silicon

nitride passivation as on standard die. Silicon nitride protects the die

surface from scratches by its hard and dense properties. The passivation

on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride.

LTC recommends that die handling be performed with extreme care so

as to protect the die surface from scratches. If the need arises to move

the die around from the chip tray, use a Teflon-tipped vacuum wand. This

wand can be made by pushing a small diameter Teflon tubing onto the tip

of a steel-tipped wand. The inside diameter of the Teflon tip should match

the die size for efficient pickup. The tip of the Teflon should be cut square

and flat to ensure good vacuum to die surface. Ensure the Teflon tip

remains clean from debris by inspecting under stereoscope.

During die attach, care must be exercised to ensure no tweezers touch the

top of the die.