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M30620FCMFP 数据表(PDF) 21 Page - Mitsubishi Electric Semiconductor |
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M30620FCMFP 数据表(HTML) 21 Page - Mitsubishi Electric Semiconductor |
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21 / 33 page  Mitsubishi microcomputers M16C / 62M Group (Low voltage version) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Timing 21 Read timing Write timing BCLK CSi ALE RD 4ns.min 4ns.min Hi–Z DB 80ns.min 0ns.min ADi BHE td(BCLK–WR) 60ns.max th(BCLK–WR) 0ns.min BCLK CSi td(BCLK–CS) 60ns.max td(BCLK–AD) ALE th(BCLK–ALE) th(BCLK–CS) 4ns.min tcyc 0ns.min th(WR–CS) 0ns.min th(WR–AD) ADi BHE td(BCLK–DB) 4ns.min th(BCLK–DB) td(DB–WR) (tcyc–80)ns.min 0ns.min th(WR–DB) DBi th(RD–AD) 0ns.min td(BCLK–ALE) 60ns.max tSU(DB–RD) Memory Expansion Mode and Microprocessor Mode (When accessing external memory area with wait) Measuring conditions : • VCC=3V • Input timing voltage : Determined with VIL=0.48V, VIH=1.5V • Output timing voltage : Determined with VOL=1.5V, VOH=1.5V WR,WRL, WRH td(BCLK–CS) 60ns.max th(RD–CS) tcyc td(BCLK–AD) 60ns.max th(BCLK–AD) –4ns.min th(BCLK–ALE) 60ns.max td(BCLK–RD) th(BCLK–RD) 0ns.min tac2(RD–DB) th(RD–DB) 0ns.min th(BCLK–AD) 60ns.max td(BCLK–ALE) 60ns.max –4ns.min 80ns.max th(BCLK–CS) 4ns.min VCC = 3V Figure 1.26.5. VCC=3V timing diagram (4) |
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