TSM7P06CPROG datasheet(2/5 Pages) TSC

2 / 5 page

TSM7P06CP

60V P-Channel Power MOSFET

2/5

Version: A14

Electrical Specifications (TC=25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

BVDSS

-60

Drain-Source On-State Resistance

VGS = -10V, ID = -3A

RDS(ON)

153

180

VGS = -4.5V, ID = -1.5A

198

220

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1.2

-1.6

-2.5

Zero Gate Voltage Drain Current

VDS = -60V, VGS = 0V

IDSS

-1

µA

VDS = -48V, VGS = 0V,

TC = 125ºC

-10

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Forward Transconductance

(Note 3)

VDS = -10V, ID = -2A

gfs

Dynamic

Total Gate Charge

(Note 3,4)

VDS = -30V, ID = -3A,

VGS = -10V

8.2

Gate-Source Charge

(Note 3,4)

Qgs

1.8

Gate-Drain Charge

(Note 3,4)

Qgd

1.5

Input Capacitance

VDS = -30V, VGS = 0V,

f = 1.0MHz

Ciss

425

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

(Note 3,4)

VDD = -30V, ID = -1A,

RGEN =6Ω

td(on)

5.2

Turn-On Rise Time

(Note 3,4)

Turn-Off Delay Time

(Note 3,4)

td(off)

Turn-Off Fall Time

(Note 3,4)

10.6

Source-Drain Diode Ratings and Characteristic

Maximum Continuous Drain-Source

Diode Forward Current

Integral reverse diode in

the MOSFET

-7

Maximum Pulse Drain-Source Diode

Forward Current

ISM

-28

Diode-Source Forward Voltage

VGS = 0V, IS = -1A

VSD

-1

Note:

Pulse width limited by safe operating area

L=1mH, IAS =-8A, VDD = -25V, RG = 25Ω, Starting TJ = 25ºC

Pulse test: pulse width

≤300µs, duty cycle ≤2%

Switching time is essentially independent of operating temperature.

TSM7P06CPROG 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM7P06CPROG 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5

数据表下载

链接网址

TSM7P06CPROG 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM7P06CPROG 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载