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TSM340N06CPROG 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

部件名 TSM340N06CPROG
功能描述  60V N-Channel Power MOSFET
PDF  9 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TSM340N06CPROG 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM340N06
60V N-Channel Power MOSFET
2/9
Version: D14
Thermal Performance
Parameter
Symbol
Limit
Unit
IPAK/DPAK ITO-220
TO-220
Thermal Resistance - Junction to Case
RӨJC
3.1
4.7
1.9
°
C/W
Thermal Resistance - Junction to Ambient
RӨJA
62
°
C/W
Electrical Specifications (T
C = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
60
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 15A
RDS(ON)
--
28
34
m
Ω
VGS = 4.5V, ID = 10A
--
33
40
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.2
1.7
2.5
V
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
IDSS
--
--
1
µA
VDS = 48V, TJ = 125°C
--
--
10
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS = 10V, ID = 8A
gfs
--
8
--
S
Dynamic
Total Gate Charge
(Note 4,5)
VDS = 30V, ID = 20A,
VGS = 10V
Qg
--
16.6
--
nC
Gate-Source Charge
(Note 4,5)
Qgs
--
2.2
--
Gate-Drain Charge
(Note 4,5)
Qgd
--
3.9
--
Input Capacitance
VDS = 30V, VGS = 0V,
f = 1MHz
Ciss
--
1180
--
pF
Output Capacitance
Coss
--
68
--
Reverse Transfer Capacitance
Crss
--
45
--
Gate Resistance
VGS=0V, VDS=0V, f=1MHz
Rg
--
2.1
--
Ω
Switching
Turn-On Delay Time
(Note 4,5)
VDD=30V , VGS=10V ,
RG=6W, ID=-1A
td(on)
--
4.6
--
ns
Turn-On Rise Time
(Note 4,5)
tr
--
14.8
--
Turn-Off Delay Time
(Note 4,5)
td(off)
--
27.2
--
Turn-Off Fall Time
(Note 4,5)
tf
--
7.8
--
Source-Drain Diode Ratings and Characteristic
Continuous Drain-Source Diode
VG=VD=0V , Force Current
IS
--
--
25
A
Pulse Drain-Source Diode
ISM
--
--
100
A
Diode-Source Forward Voltage
VGS = 0V, IS = 1A
VSD
--
--
1
V
Reverse Recovery Time
(Note 4)
VGS = 0V, IS = 1A
dIF/dt = 100A/µs
trr
--
17
--
ns
Reverse Recovery Charge
(Note 4)
Qrr
--
12
--
nC
Note:
1.
Limited by maximum junction temperature
2.
Pulse width limited by safe operating area
3.
L = 0.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4.
Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%
5.
Switching time is essentially independent of operating temperature.



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