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TSM480P06CPROG 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

部件名 TSM480P06CPROG
功能描述  60V P-Channel Power MOSFET
PDF  9 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TSM480P06CPROG 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM480P06
60V P-Channel Power MOSFET
2/9
Version: D14
Thermal Performance
Parameter
Symbol
Limit
Unit
IPAK/DPAK ITO-220
TO-220
Thermal Resistance - Junction to Case
RӨJC
3.1
4.7
1.9
°
C/W
Thermal Resistance - Junction to Ambient
RӨJA
62
°
C/W
Electrical Specifications (T
C = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
-60
--
--
V
Drain-Source On-State Resistance
VGS = -10V, ID = -8A
RDS(ON)
--
39
48
m
Ω
VGS = -4.5V, ID = -4A
53
65
Gate Threshold Voltage
VDS = VGS, ID = -250µA
VGS(TH)
-1.2
-1.6
-2.2
V
Zero Gate Voltage Drain Current
VDS = -60V, VGS = 0V
IDSS
--
--
-1
µA
VDS = -48V, Tc = 125°C
--
--
-10
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
(Note 4)
VDS = -10V, ID = -8A
gfs
--
10
--
S
Dynamic
Total Gate Charge
(Note 4,5)
VDS = -30V, ID = -8A,
VGS = -10V
Qg
--
22.4
--
nC
Gate-Source Charge
(Note 4,5)
Qgs
--
4.1
--
Gate-Drain Charge
(Note 4,5)
Qgd
--
5.2
--
Input Capacitance
VDS = -30V, VGS = 0V,
f = 1.0MHz
Ciss
--
1250
--
pF
Output Capacitance
Coss
--
85
--
Reverse Transfer Capacitance
Crss
--
65
--
Switching
Turn-On Delay Time
(Note 4,5)
VDD = -30V, ID = -1A,
RGEN =6Ω
td(on)
--
13
--
ns
Turn-On Rise Time
(Note 4,5)
tr
--
42.4
--
Turn-Off Delay Time
(Note 4,5)
td(off)
--
64.6
--
Turn-Off Fall Time
(Note 4,5)
tf
--
16.4
--
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
the MOSFET
IS
--
--
-16
A
Maximum Pulse Drain-Source Diode
Forward Current
ISM
--
--
-64
A
Diode-Source Forward Voltage
VGS = 0V, IS = -1A
VSD
--
--
-1
V
Note:
1.
Limited by maximum junction temperature
2.
Pulse width limited by safe operating area
3.
L = 3.68mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4.
Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%
5.
Switching time is essentially independent of operating temperature



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