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LED385 数据表(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED385 数据表(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 8 page ![]() 02.10.2012 LED385-series 1 of 8 LED385-series TECHNICAL DATA UV LED InGaN LED385-series are InGaN LEDs mounted on a lead frame and encapsulated in various types of clear silicone lens, which offers different design settings. On forward bias, it emits a radiation of typical 11 mW at a peak wavelength at 385 nm. Specifications • Structure: InGaN • Peak Wavelength: typ. 385 nm • Optical Ouput Power: typ. 11 mW • Resin Material: Clear silicone resin • Solder: Lead free Absolute Maximum Ratings (Ta=25°C) Type Symbol Value Unit Power Dissipation PD 200 mW Forward Current IF 50 mA Reverse Voltage VR 5 V Operating Temperature TOP -30 … +85 °C Storage Temperature TSTG -40 … +100 °C Soldering Temperature (for 5 sec.) TSOL 265 °C Electro-Optical Characteristics (Ta=25°C) Item Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF = 20 mA - 3.5 4.0 V Reverse Current IR VR = 5 V - - 10 µA Radiated Power PO IF = 20 mA - 11 - mW Peak Wavelength λ P IF = 20 mA 380 385 390 nm Half Width Δλ IF = 20 mA - 15 - nm |
类似零件编号 - LED385 |
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类似说明 - LED385 |
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