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TSM650P02CX 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 TSM650P02CX
功能描述  20V P-Channel Power MOSFET
PDF  5 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TSM650P02CX 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM650P02CX
20V P-Channel Power MOSFET
1/5
Version: A14
SOT-23
Key Parameter Performance
Parameter
Value
Unit
VDS
-20
V
RDS(on) (max)
VGS =- 4.5V
65
m
Ω
VGS = -2.5V
85
VGS = -1.8V
130
Qg
6.4
nC
Features
●
Fast switching
●
Suited for -1.8V gate drive applications
●
Halogen-free
Block Diagram
P-Channel MOSFET
Ordering Information
Part No.
Package
Packing
TSM650P02CX RFG
SOT-23
3kcs / 7
” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (T
C = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±10
V
Continuous Drain Current
TC = 25°C
ID
-4.1
A
TC = 100°C
-2.6
A
Pulsed Drain Current
(Note 1)
IDM
-16.4
A
Power Dissipation @ TC = 25℃
PD
1.56
W
Operating Junction Temperature
TJ
150
°
C
Storage Temperature Range
TSTG
-55 to +150
°
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Ambient
RӨJA
80
°
C/W
Pin Definition:
1. Gate
2. Source
3. Drain


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