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LED570-06 数据表(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED570-06 数据表(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 4 page ![]() www.roithner-laser.com 1 LED570-06 v 1.1 27.11.2014 Description LED570-06 contains a AlGaInP LED mounted on a lead frame hermetically sealed with a clear epoxy lens. On forward bias, it emits a power radiation of typical 0.6 mW at a peak wavelength at 570 nm. Maximum Ratings (T CASE=25°C) Parameter Symbol Values Min. Max. Unit Power Dissipation PD 120 mW Forward Current IF 20 mA Pulse Forward Current * 1 IFP 100 mA Reverse Voltage VF 5 V Thermal Resistance RTHJA 300 K/W Junction Temperature TJ 120 °C Operating Temperature TCASE - 40 + 85 °C Storage Temperature TSTG - 40 + 100 °C Lead Solder Temperature * 2 TSLD + 250 °C * 1 duty=1%, pulse width = 10 µs * 2 must be completed within 5 seconds Electro-Optical Characteristics (T CASE=25°C) * 1 measured by S3584-08 * 2 measured by CIE127-2007 Condition B Parameter Symbol Conditions Values Min. Typ. Max. Unit Peak Wavelength λP IF=20mA 560 570 580 nm Half Width ∆λ IF=20mA 15 nm Forward Voltage VF IF=20mA 2.1 2.3 V VFP IFP=100mA 2.4 Radiated Power * 1 PO IF=20mA 0.6 mW IFP=100mA 3.8 Radiant Intensity * 2 IE IF=20mA 5.5 mW/sr IFP=100mA 35 Brightness IV IF=20mA 7.8 cd Viewing Angle φ IF=100mA 6 deg. Rise Time tR IF=20mA 70 ns Fall Time tF IF=20mA 65 ns |
类似零件编号 - LED570-06 |
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类似说明 - LED570-06 |
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