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RH108A

TA = 25°C

SUB-

SYMBOL PARAMETER

CONDITIONS

NOTES

MIN

TYP

MAX

GROUP

MIN

TYP

MAX

GROUP

UNITS

VOS

Input Offset Voltage

0.5

1.0

2,3

V OS

Average Tempco of

5.0

µV/°C

Temp

Offset Voltage

IOS

Input Offset Current

0.2

0.4

2,3

I S

Average Tempco of

2.5

pA/°C

Temp

Offset Current

Input Bias Current

2.0

3.0

2,3

AVOL

Large-Signal Voltage Gain

VS = ± 15V, VOUT = ± 10V

5,6

V/mV

RL 10k

CMRR

Common Mode Rejection

2,3

Ratio

PSRR

Power Supply Rejection

2,3

Ratio

Input Voltage Range

VS = ± 15V

± 13.5

VOUT

Output Voltage Swing

VS = ± 15V, RL = 10k

± 13

5,6

RIN

Input Resistance

Supply Current

(Note 6)

0.6

0.4

– 55°C T A 125°C

(Preirradiation) (Note 4)

TABLE 1: ELECTRICAL CHARACTERISTICS

TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5)

10KRAD(Si)

20KRAD(Si) 50KRAD(Si) 80KRAD(Si)

SYMBOL PARAMETER

CONDITIONS

NOTES

MIN

MAX

MIN MAX

MIN

MAX MIN

MAX UNITS

VOS

Input Offset Voltage

0.5

1.0

IOS

Input Offset Current

0.2

Input Bias Current

± 2.0

± 4.0

AVOL

Large-Signal Voltage Gain

VS = ± 15V, VOUT = ± 10V

RL 10k

CMRR

Common Mode Rejection Ratio

PSRR

Power Supply Rejection Ratio

Input Voltage Range

±13.5

VOUT

Output Voltage Swing

±13

RIN

Input Resistance

Supply Current

0.6

Note 1: Differential input voltages greater than 1V will cause excessive

current to flow through the input diodes unless limiting resistance is used.

Note 2: For supply voltages less than ±15V, the maximum input voltage is

equal to the supply voltage.

Note 3: Guaranteed by design, characterization or correlation to other

tested parameters.

Note 4: ± 5V V S ± 20V unless otherwise noted.

Note 5: VS = ± 15V, VCM = 0V, TA = 25°C unless otherwise noted.

Note 6: 25°C T A 125°C.

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