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RH111 数据表(PDF) 2 Page - Linear Technology |
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RH111 数据表(HTML) 2 Page - Linear Technology |
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2 / 4 page ![]() 2 RH111 TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 8) –55 °C ≤ TA ≤ 125°C TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS VOS Input Offset Voltage RS ≤ 50k 3,4 3.0 1 4.0 2,3 mV IOS Input Offset Current 3,4 10 1 20 2,3 nA IB Input Bias Current 3 100 1 150 2,3 nA AVOL Large-Signal Voltage Gain 7 40 4 V/mV Input Voltage Range VS = ±15V, VPIN7 ≤ 5V – 14.5 13.0 1 – 14.5 13.0 2,3 V tD Response Time 5 200 ns VOL Output Saturation Voltage VIN = 5mV, IOUT = 50mA, V + ≥ 4.5V, V– = 0V 1.5 1 V VIN ≤ 6mV, IOUT ≤ 8mA 0.4 1 0.4 2,3 V Output Leakage Current VIN = 5V, ISTROBE = 3mA, 10 1 500 2,3 nA VOUT = 20V Positive Supply Current 6.0 1 mA Negative Supply Current 5.0 1 mA Strobe Current Minimum to Ensure Output 6 3 mA Transistor Is Turned Off Input Capacitance 6 pF SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage RS ≤ 50k 3.0 3.0 3.0 3.0 4.0 mV IOS Input Offset Current 10 10 10 25 50 nA IB Input Bias Current 100 150 200 300 400 nA AVOL Large-Signal Voltage Gain 7 40 40 40 40 25 V/mV Input Voltage Range VS = ±15V, VPIN7 ≤ 5V –14.5 13.0 –14.5 13.0 –14.5 13.0 –14.5 13.0 – 14.5 13.0 V VOL Output Saturation Voltage VIN = 5mV, IOUT = 50mA V + ≥ 4.5V, V– = 0V 1.5 1.5 1.5 1.5 1.5 V VIN ≤ 6mV, IOUT ≤ 8mA 0.4 0.4 0.4 0.4 0.4 V Output Leakage Current VIN ≥ 5mV, ISTROBE = 3mA 10 10 100 100 100 nA VOUT = 20V Positive Supply Current 6.0 6.0 6.0 6.0 6.0 mA Negative Supply Current 5.0 5.0 5.0 5.0 5.0 mA Strobe Current Minimum to Ensure Output 6 3 (Typ) 3(Typ) 3(Typ) 3(Typ) 3(Typ) mA Transistor Is Turned Off Input Capacitance 6 (Typ) 6(Typ) 6(Typ) 6(Typ) 6(Typ) pF 100KRAD(Si) 50KRAD(Si) 20KRAD(Si) TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 9) 10KRAD(Si) 200KRAD(Si) |
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