27.11.2012

LED39-PR

1 of 3

LED20-PR

TECHNICAL DATA

Mid-Infrared Light Emitting Diode

Light Emitting Diodes with central wavelength 2.05 µm series are based on heterostructures grown

on GaSb substrates by MOCVD. GaInAsSb is used in the active layer. Wide band gap solid

solutions AlGaAsSb are used for good electron confinement.

LED20-PR has a stable ouput power and a lifetime more then 80000 hours.

Specifications

(Unit: mm)

•

Structure:

GaInAsSb/AlGaAsSb

•

Peak Wavelength:

typ. 2.05 µm

•

Optical Output Power:

typ. 1.0 mW qCW

•

Package:

TO-18

with PR and without window

Item

Condition

Value

Unit

Min.

Typ.

Max.

Peak Wavelength

T=300 K

2.00

2.05

2.09

µm

FWHM

150 mA qCW

0.15

0.20

0.25

µm

Quasi-CW

Optical Power

200 mA qCW

0.8

1.0

1.2

mW

Pulsed

Optical Power

I=1 A, f=1 Hz,

d.c. 0.1%

20

25

30

mW

Switching Time

T=300 K

10

20

30

ns

Operation Voltage

200 mA qCW

0.5

-

1.5

V

Operating

Temperature

-200 … +50

°C

Emitting Area

300 x 300

µm

Soldering

Temperature

180

°C

Package

TO-18, with parabol reflector and without window

Operation Instructions

•

LED basic circuit connection

•

We recommend to use one of our drivers

and evaluation boards designed for those

Mid-IR LEDs

D-11, D-31, D-31M

DLT-27, DLT-37

mD-1c, mD-1p