10.11.2010

LED20-SMD3

1 of 2

LED20-SMD3

TECHNICAL DATA

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 2.05 µm series are based on heterostructures grown

on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid

solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED20-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features

• Structure: GaInAsSb/AlGaAsSb

• Peak Wavelength: typ. 2.05 µm

• Optical Ouput Power: typ. 1.0 mW qCW

• Package: SMD 3x3 mm

Specifications

Rating

Item

Condition

Min.

Typ.

Max.

Unit

Peak Wavelength

T=300 K

2.02

2.05

2.07

µm

FWHM

150 mA CW

150

200

250

nm

Quasi-CW

Optical Power

200 mA qCW

0.8

1.0

1.2

mW

Pulsed

Optical Power

1 A

20

25

30

mW

Switching Time

T=300 K

10

20

30

ns

Operation Voltage

200 mA qCW

V

Operating

Temperature

-240 … +50

°C

Emitting Area

300x300

µm

Soldering

Temperature

180

°C

Package

SMD type package 3x3 mm based on high

thermal conductivity ceramics

Operating Regime

Quasi-CW

•

Maximum current 220 mA

•

Recommended current 150-200mA

Pulsed

•

Maximum current 1 A

(puls lenght 500 ns, repetition rate 2kHz)