12.12.2011

LED660N-03

1 of 4

LED660N-03

TECHNICAL DATA

Infrared LED, 5 mm

AlGaInP

LED660N-series are AlGaInP LEDs mounted on a lead frame and encapsulated in various types of epoxy

lens, which offers different design settings.

On forward bias, it emits a high power radiation of typical 15 mW at a peak wavelength at 660 nm.

Specifications

•

Structure: AlGaAs

•

Peak Wavelength: typ. 660 nm

•

Optical Ouput Power: typ. 15 mW

•

Resin Material: Epoxy resin

Type

Symbol

Value

Unit

Power Dissipation

120

mW

Forward Current

50

mA

Forward pulsed Current*

200

mA

Reverse Voltage

5

V

Junction Temperature

100

°C

Thermal Resistance

190

K/W

Operating Temperature

-30 … +80

°C

Storage Temperature

-40 … +100

°C

Soldering Temperature (for 5 sec.)

265

°C

* Pulse condition: Duty 1%, Puls Width 10µs

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

-

2.1

2.3

V

Reverse Current

-

-

10

µA

Radiated Power

8

15

-

mW

Peak Wavelength

λ

P

650

660

670

nm

Half Width

Δλ

-

18

-

nm

Rise Time

-

80

-

ns

Fall Time

-

80

-

ns

Type

Viewing

Half Angle

Outer Dimension

[Unit: mW/sr]

Typ.

LED660N-03

±12°

25

Ø 5 mm

* Radiant Power is measured by S3584-08

* Brightness is measured by TekTronix J-16

The above specifications are for reference purpose only and subjected to change without prior notice.