21.11.2011

LED820-series

1 of 8

LED820-series

TECHNICAL DATA

Infrared LED

AlGaAs

LED820-series are AlGaAs LEDs mounted on a lead frame and encapsulated in various types of

epoxy lens, which offers different design settings.

On forward bias, it emits a high power radiation of typical 18 mW at a peak wavelength at 820 nm.

Specifications

• Structure: AlGaAs

• Peak Wavelength: typ. 820 nm

• Optical Ouput Power: typ. 18 mW

• Resin Material: Epoxy resin

• Solder: Lead free

Type

Symbol

Value

Unit

Power Dissipation

170

mW

Forward Current

100

mA

Pulse Forward Current

500

mA

Reverse Voltage

5

V

Operating Temperature

-30 … +85

°C

Storage Temperature

-40 … +100

°C

Soldering Temperature (for 5 sec.)

265

°C

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

-

1.6

1.8

V

Reverse Current

-

-

10

µA

Radiated Power

16

18

-

mW

Peak Wavelength

λ

P

805

820

835

nm

Half Width

Δλ

-

35

-

nm

Rise Time

-

50

-

ns

Fall Time

-

25

-

ns