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MMDTA06 数据表(PDF) 4 Page - Diodes Incorporated

部件名 MMDTA06
功能描述  80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

MMDTA06 数据表(HTML) 4 Page - Diodes Incorporated

  MMDTA06 Datasheet HTML 1Page - Diodes Incorporated MMDTA06 Datasheet HTML 2Page - Diodes Incorporated MMDTA06 Datasheet HTML 3Page - Diodes Incorporated MMDTA06 Datasheet HTML 4Page - Diodes Incorporated MMDTA06 Datasheet HTML 5Page - Diodes Incorporated MMDTA06 Datasheet HTML 6Page - Diodes Incorporated MMDTA06 Datasheet HTML 7Page - Diodes Incorporated MMDTA06 Datasheet HTML 8Page - Diodes Incorporated  
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MMDTA06
Document Number: DS35114 Rev: 2 - 2
4 of 8
www.diodes.com
May 2015
© Diodes Incorporated
MMDTA06
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
100
V
IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
80
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
6
V
IE = 100µA, IC = 0
Collector-Base Cut-Off Current
ICBO
100
nA
VCB = 80V, IE = 0
Collector-Emitter Cut-Off Current
ICES
100
nA
VCE = 80V, IB = 0
Emitter-base Cut-Off Current
IEBO


100
nA
VEB = 5V, IC = 0
ON CHARACTERISTICS (Note 10)
DC Current Gain
hFE
100
IC = 10mA, VCE = 1V
100


IC = 100mA, VCE = 1V
Collector-Emitter Saturation Voltage
VCE(sat)
0.25
V
IC = 100mA, IB = 10mA
Base-Emitter Turn-On Voltage
VBE(on)
1.20
V
IC = 100mA, VCE = 1V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
100
163
MHz
VCE = 2V, IC = 10mA, f = 100MHz
Output Capacitance
Cobo
7

pF
VCB = 10V, f = 1MHz
Note:
10. Measured under pulsed conditions. Pulse width
 300µs. Duty cycle  2%.



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