ZXT2MATC datasheet(4/7 Pages) DIODES

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ZXT2MA

Document Number: DS35302 Rev. 1 - 2

4 of 7

www.diodes.com

April 2011

A Product Line of

Diodes Incorporated

ZXT2MA

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-25

-35

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 7)

BVCEO

-20

-25

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7.5

-8.5

IE = -100µA

Collector Cutoff Current

ICBO

-25

VCB = -20V

Emitter Cutoff Current

IEBO

-25

nA

VEB = -6V

Collector Emitter Cutoff Current

ICES

-25

VCES = -16V

Static Forward Current Transfer Ratio

(Note 7)

hFE

300

475

IC = -10mA, VCE = -2V

300

450

IC = -100mA, VCE = -2V

150

230

IC = -2A, VCE = -2V

IC = -6A, VCE = -2V

Collector-Emitter Saturation Voltage

(Note 7)

VCE(sat)

-19

-30

IC =- 0.1A, IB = -10mA

-170

-220

IC = -1A, IB = -20mA

-190

-250

IC = -1.5A, IB = -50mA

-240

-350

IC = -2.5A, IB = -150mA

-225

-300

IC = -3.5A, IB = -350mA

Base-Emitter Turn-On Voltage (Note 7)

VBE(on)

-0.87

-0.95

IC = -3.5A, VCE = -2V

Base-Emitter Saturation Voltage (Note 7)

VBE(sat)

-1.01

-1.075

IC = -3.5A, IB = -350mA

Output Capacitance

Cobo

VCB = -10V. f = 1MHz

Transition Frequency

150

180

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Turn-On Time

ton

VCC = -10V, IC = -1A

IB1 = IB2 = -10mA

Turn-Off Time

toff

670

Notes:

7. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%

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