BAS516 datasheet(1/3 Pages) LRC

部件名	BAS516

功能描述	High-speed diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

标志

1 / 3 page

LESHAN RADIO COMPANY, LTD.

S29–1/2

High-speed diode

SOD523 SC-79

1

2

BAS516

2

ANODE

1

CATHODE

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V RRM

repetitive peak reverse voltage

–

85

V

V R

continuous reverse voltage

–

75

V

I F

continuous forward current

T s =90°C; note 1; see Fig.1

–

250

mA

I FRM

repetitive peak forward current

–

500

mA

I FSM

non-repetitive peak forward current

square wave; T j =25°C prior to

surge; see Fig.3

t =1

µs–

4

A

t =1 ms

–

1

A

t =1 s

–

0.5

A

P tot

total power dissipation

T s =90°C; note 1

–

500

mW

T stg

storage temperature

-65

+150

°C

T j

junction temperature

–

150

°C

Note

1. Ts is the temperature at the soldering point of the cathode tab.

ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

V F

forward voltage

see Fig.2 I F = 1 mA

715

mV

I F = 10 mA

855

mV

I F =50 mA

1

V

I F = 150 mA

1.25

V

I R

reverse current

see Fig.4 V R = 25 V

30

nA

V R =75 V

1

µA

V R = 25 V; T j = 150 °C

30

µA

V R = 75 V; T j = 150 °C;

50

µA

C d

diode capacitance

f = 1 MHz; V R = 0; see Fig.5

1

pF

t rr

reverse recovery time

when switched from I F=10mA to I R= 10mA;

4n s

R L= 100

Ω; measured at I

R = 1 mA; see Fig.6

V fr

forward recovery voltage

when switched from IF = 10 mA; tr = 20 ns; see Fig.7

1.75

V

THERMALCHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-s

thermalresistancefromjunctiontosolderingpoint

note 1

120

K/W

Note

1. Soldering point of the cathode tab.

FEATURES

· Ultra small plastic SMD package

· High switching speed: max. 4 ns

· Continuous reverse voltage: max. 75 V

· Repetitive peak reverse voltage: max. 85 V

· Repetitive peak forward current: max. 500 mA.

APPLICATIONS

· High-speed switching in e.g. surface mounted

circuits.

DESCRIPTION

The BAS516 is a high-speed

switching diode fabricated in

planar technology, and

encapsulated in the SOD523

(SC79) SMD plastic package.

类似零件编号 - BAS516

制造商	部件名	数据表	功能描述
NXP Semiconductors	BAS516	59Kb / 12P	High-speed diode 1998 Aug 31
Jiangsu Changjiang Elec...	BAS516	109Kb / 3P	Switching Diodes
TRANSYS Electronics Lim...	BAS516	105Kb / 1P	Plastic-Encapsulated Diodes
Galaxy Semi-Conductor H...	BAS516	188Kb / 4P	High Speed Switching Diode
Weitron Technology	BAS516	225Kb / 4P	High Speed Switching Diodes

More results

类似说明 - BAS516

制造商	部件名	数据表	功能描述
NXP Semiconductors	BA220	41Kb / 7P	High-speed diode 1996 Sep 03
	BAL99	55Kb / 12P	High-speed diode 1999 May 26
	BAS316	64Kb / 12P	High-speed diode 1998 Mar 26
	BAS32L	34Kb / 7P	High-speed diode 1996 Sep 10
SEMTECH ELECTRONICS LTD...	BAS32L	276Kb / 4P	HIGH SPEED DIODE
NXP Semiconductors	PMBD6050,215	131Kb / 10P	High-speed diode 2004 Jan 14
Leshan Radio Company	LBAS316T1G	236Kb / 4P	High-speed diode
Leshan Radio Company	LBAS516T1G	204Kb / 4P	High-speed Diode
NXP Semiconductors	PMBD6050	131Kb / 10P	High-speed diode 2004 Jan 14
Nexperia B.V. All right...	PMBD6050	313Kb / 1P	High-speed diode 2004 Jan 14