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FCX458 数据表(PDF) 4 Page - Diodes Incorporated |
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FCX458 数据表(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() FCX458 Document number: DS33053 Rev. 6 - 2 4 of 7 www.diodes.com December 2014 © Diodes Incorporated FCX458 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 400 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 11) BVCEO 400 — — V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 7 — — V IE = 100µA Collector-Base Cutoff Current ICBO — <1 100 nA VCB = 320V Collector Cutoff Current ICES — <1 100 nA VCES = 320V Emitter Cutoff Current IEBO — <1 100 nA VEB = 5.6V Collector-Emitter Saturation Voltage (Note 11) VCE(sat) — — — — 200 500 mV IC = 20mA, IB = 2mA IC = 50mA, IB = 6mA Base-Emitter Saturation Voltage (Note 11) VBE(sat) — — 900 mV IC = 50mA, IB = 5mA Base-Emitter Turn-On Voltage (Note 11) VBE(on) — — 900 mV IC = 50mA, VCE = 10V DC Current Gain (Note 11) hFE 100 100 15 — 300 — IC = 1mA, VCE = 10V IC = 50mA, VCE = 10V IC = 100mA, VCE = 10V Transitional Frequency fT 50 — — MHz IC = 10mA, VCE = 20V, f = 20MHz Output Capacitance Cobo — — 5 pF VCB = 20V. f = 1MHz Turn-On Time ton — 135 — ns IC =50mA, VCE=100V, IB1 = 5mA, IB2 = -10mA Turn-Off Time toff — 2260 — ns Note: 11 . Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% |
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