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FCX458 数据表(PDF) 4 Page - Diodes Incorporated

部件名 FCX458
功能描述  400V NPN HIGH VOLTAGE TRANSISTOR IN SOT89
PDF  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

FCX458 数据表(HTML) 4 Page - Diodes Incorporated

  FCX458_15 Datasheet HTML 1Page - Diodes Incorporated FCX458_15 Datasheet HTML 2Page - Diodes Incorporated FCX458_15 Datasheet HTML 3Page - Diodes Incorporated FCX458_15 Datasheet HTML 4Page - Diodes Incorporated FCX458_15 Datasheet HTML 5Page - Diodes Incorporated FCX458_15 Datasheet HTML 6Page - Diodes Incorporated FCX458_15 Datasheet HTML 7Page - Diodes Incorporated  
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FCX458
Document number: DS33053 Rev. 6 - 2
4 of 7
www.diodes.com
December 2014
© Diodes Incorporated
FCX458
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
400
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
400
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
7
V
IE = 100µA
Collector-Base Cutoff Current
ICBO
<1
100
nA
VCB = 320V
Collector Cutoff Current
ICES
<1
100
nA
VCES = 320V
Emitter Cutoff Current
IEBO
<1
100
nA
VEB = 5.6V
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
200
500
mV
IC = 20mA, IB = 2mA
IC = 50mA, IB = 6mA
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
900
mV
IC = 50mA, IB = 5mA
Base-Emitter Turn-On Voltage (Note 11)
VBE(on)
900
mV
IC = 50mA, VCE = 10V
DC Current Gain (Note 11)
hFE
100
100
15
300
IC = 1mA, VCE = 10V
IC = 50mA, VCE = 10V
IC = 100mA, VCE = 10V
Transitional Frequency
fT
50
MHz
IC = 10mA, VCE = 20V,
f = 20MHz
Output Capacitance
Cobo
5
pF
VCB = 20V. f = 1MHz
Turn-On Time
ton
135
ns
IC =50mA, VCE=100V,
IB1 = 5mA, IB2 = -10mA
Turn-Off Time
toff
2260
ns
Note:
11
. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%



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