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SP8010E 数据表(PDF) 2 Page - SamHop Microelectronics Corp.

部件名 SP8010E
功能描述  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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制造商  SAMHOP [SamHop Microelectronics Corp.]
网页  http://www.samhop.com.tw
标志 SAMHOP - SamHop Microelectronics Corp.

SP8010E 数据表(HTML) 2 Page - SamHop Microelectronics Corp.

  SP8010E Datasheet HTML 1Page - SamHop Microelectronics Corp. SP8010E Datasheet HTML 2Page - SamHop Microelectronics Corp. SP8010E Datasheet HTML 3Page - SamHop Microelectronics Corp. SP8010E Datasheet HTML 4Page - SamHop Microelectronics Corp. SP8010E Datasheet HTML 5Page - SamHop Microelectronics Corp. SP8010E Datasheet HTML 6Page - SamHop Microelectronics Corp. SP8010E Datasheet HTML 7Page - SamHop Microelectronics Corp. SP8010E Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
24
V
10
IGSS
±10
uA
VGS(th)
V
4.3
Qg
118
nC
304
1390
970
tD(ON)
27
ns
tr
ns
tD(OFF)
ns
tf
ns
SWITCHING CHARACTERISTICS
VDD=12V
ID=13A
VGS=10V
RGEN= 4.7 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=13A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=0.3mA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=-12V , ID=10mA
ON CHARACTERISTICS
VGS=6V , ID=13A
5.4
4.9
6.6
m ohm
b
SP8010E
Ver 1.2
www.samhop.com.tw
Mar,24,2014
2
VSD
nC
Qgs
nC
Qgd
6.7
5.6
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=20V,ID=26A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=26A
0.85
1.3
V
Notes
VDS=20V,ID=26A,VGS=10V
1.0
1.4
2.0
VGS=0V , ID=10mA
V
BVDSX
10
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
VGS=4V , ID=13A
7.0
9.5
m ohm



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