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FMMT493TA 数据表(PDF) 2 Page - Diodes Incorporated |
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FMMT493TA 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() FMMT493 Document number: DS33093 Rev. 4 - 2 2 of 7 www.diodes.com April 2013 © Diodes Incorporated FMMT493 A Product Line of Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 7 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A Base Current IB 200 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 500 mW Thermal Resistance, Junction to Ambient (Note 6) RθJA 250 °C/W Thermal Resistance, Junction to Lead (Note 7) RθJL 197 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C Notes: 6. For a device mounted on 15mm X 15mm 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. |
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