CMLD3003DO

CMLD3003DOG

SURFACE MOUNT SILICON

DUAL, ISOLATED, OPPOSING

LOW LEAKAGE

SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD3003DO

and CMLD3003DOG devices contain two (2) isolated

opposing configuration, silicon switching diodes,

manufactured by the epitaxial planar process, epoxy

molded in an SOT-563 surface mount package.

These devices are designed for switching applications

requiring extremely low leakage.

MARKING CODES:

CMLD3003DO: C30

CMLD3003DOG: 3CG

SOT-563 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

180

V

Average Rectified Current

IO

200

mA

Continuous Forward Current

IF

600

mA

Peak Repetitive Forward Current

IFRM

700

mA

Peak Forward Surge Current, tp=1.0μs

IFSM

2.0

A

Peak Forward Surge Current, tp=1.0s

IFSM

1.0

A

Power Dissipation

PD

250

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=125V

1.0

nA

IR

VR=125V, TA=150°C

3.0

μA

IR

VR=180V

10

nA

IR

VR=180V, TA=150°C

5.0

μA

BVR

IR=5.0μA

200

V

VF

IF=1.0mA

0.62

0.72

V

VF

IF=10mA

0.72

0.83

V

VF

IF=50mA

0.80

0.89

V

VF

IF=100mA

0.83

0.93

V

VF

IF=200mA

0.87

1.10

V

VF

IF=300mA

0.90

1.15

V

CJ

VR=0, f=1.0MHz

4.0

pF

• The CMLD3003DOG is Halogen Free by design

R4 (15-June 2015)

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