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ZXTP749F 数据表(PDF) 2 Page - Diodes Incorporated |
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ZXTP749F 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() ZXTP749F Document Number: DS31901 Rev. 3 - 2 2 of 7 www.diodes.com January 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP749F Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -6 A Base Current IB -500 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 725 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 172 °C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 79 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). |
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