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MBT3946DW1T1 数据表(PDF) 1 Page - Leshan Radio Company |
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MBT3946DW1T1 数据表(HTML) 1 Page - Leshan Radio Company |
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1 / 10 page ![]() LESHAN RADIO COMPANY, LTD. MBT3904–1/12 1 3 2 Dual General Purpose Transistors MAXIMUM RATINGS Rating Symbol Voltage Unit Collector–Emitter Voltage V CEO V MBT3904DW1T1 (NPN) 40 MBT3906DW1T1 (PNP) –40 Collector–Base Voltage V CBO V MBT3904DW1T1 (NPN) 60 MBT3906DW1T1 (PNP) –40 Emitter–Base Voltage V EBO V MBT3904DW1T1 (NPN) 6.0 MBT3906DW1T1 (PNP) –5.0 Collector Current -Continuous I C mAdc MBT3904DW1T1 (NPN) 200 MBT3906DW1T1 (PNP) –200 Electrostatic Discharge ESD HBM>16000, V MM>2000 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation(1) P D 150 mW TA = 25°C Thermal Resistance, R θJA 833 °C/W Junction to Ambient Junction and Storage T J , T stg –55 to +150 °C Temperature 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. See Table 6 4 5 SOT–363/SC–88 CASE 419B STYLE 1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 MBT3906DW1T1 1 3 2 6 4 5 Q1 Q2 1 3 2 6 4 5 Q1 Q2 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low–power surface mount applications where board space is at a premium. • h FE, 100–300 • Low VCE(sat) , 3 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 1 3 2 6 4 5 Q1 Q2 *Q 1 same as MBT3906DW1T1 Q 2 same as MBT3904DW1T1 ORDERING INFORMATION Device Package Shipping MBT3904DW1T1 SOT–363 3000 Units/Reel MBT3906DW1T1 SOT–363 3000 Units/Reel MBT3946DW1T1 SOT–363 3000 Units/Reel |
类似零件编号 - MBT3946DW1T1 |
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类似说明 - MBT3946DW1T1 |
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