MMBD301L datasheet(1/2 Pages) LRC

部件名	MMBD301L

功能描述	Silicon Hot-Carrier Diodes Schottky Barrier Diodes

PDF	2 Pages

Scroll/Zoom	100%

制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

标志

1 / 2 page

LESHAN RADIO COMPANY, LTD.

G16–1/2

MAXIMUM RATINGS(TJ=125°C unless otherwise noted)

MBD301

MMBD301LT1

Rating

symbol

value

unit

Reverse Voltage

V R

30

Volts

Forward Power Dissipation

P F

@TA=25 °C

280

200

mW

Derate above 25 °C

2.8

2.0

mW/ °C

Operating Junction

T J

°C

Temperature Range

–55 to +125

Storage Temperature Range

T stg

–55 to +150

°C

DEVICE MARKING

MMBD301LT1=4T

ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

M a x

Unit

Reverse Breakdown Voltage(IR=10

µA)

V (BR)R

30

—

Volts

Total Capacitance(VR=15V,f=1.0MHz,)Figure1

C T

—

0.9

1.5

pF

Reverse Leakage(VR=25V)Figure3

I R

—

13

200

nAdc

Forward Voltage(IF=1.0mAdc)Figure4

V F

—

0.38

0.45

Vdc

Forward Voltage(IF=10mAdc)Figure4

V F

—

0.52

0.6

Vdc

NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk.

Silicon Hot–Carrier Diodes

Schottky Barrier Diodes

3

CATHODE

1

ANODE

These devices are designed primarily for high–efficiency UHF and VHF detector

applications.They are readily adaptable to many other fast switching RF and digital

applications.They are supplied in an inexpensive plastic package for low–cost,

high–volume consumer and industrial/commercial requirements.They are also

available in a Surface Mount package.

•

EXtremely Low Minority Carrier Lifetime –15ps(Typ)

•

very Low Capacitance –1.5pF(Max)@VR=15V

•

CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301

1

3

2

CASE

318–08, STYLE 6

SOT– 23

(TO–236AB)

MMBD301LT1

30 VOLTS

SILICON HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

类似零件编号 - MMBD301L

制造商	部件名	数据表	功能描述
ON Semiconductor	MMBD301L	90Kb / 4P	SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1997
	MMBD301LT1	90Kb / 4P	SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1997
	MMBD301LT1	65Kb / 5P	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes January, 2007 ??Rev. 4
	MMBD301LT1G	65Kb / 5P	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes January, 2007 ??Rev. 4
	MMBD301LT1G	135Kb / 5P	Silicon Hot-Carrier Diodes August, 2009 ??Rev. 5

More results

类似说明 - MMBD301L

制造商	部件名	数据表	功能描述
Leshan Radio Company	MBD701	54Kb / 2P	Silicon Hot-Carrier Diodes
ON Semiconductor	MMDL301	39Kb / 4P	Silicon Hot-Carrier Diodes January, 2000 ??Rev. 0
Leshan Radio Company	LMBD301LT1	87Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
Leshan Radio Company	LMBD301LT1G	110Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	128Kb / 4P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2009 ??Rev. 5
	MMBD452LT1G	124Kb / 3P	Dual Hot-Carrier Diodes Schottky Barrier Diodes August, 2009 ??Rev. 4
	MBD301G	135Kb / 5P	Silicon Hot-Carrier Diodes August, 2009 ??Rev. 5
	MMDL301T1G	94Kb / 3P	Silicon Hot-Carrier Diodes September, 2010??Rev. 2
	MBD301G	95Kb / 5P	Silicon Hot-Carrier Diodes October, 2016 ??Rev. 8
	MBD701	94Kb / 5P	Silicon Hot-Carrier Diodes October, 2016 ??Rev. 7