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FZT853 数据表(PDF) 4 Page - Diodes Incorporated

部件名 FZT853
功能描述  100V NPN MEDIUM POWER TRANSISTOR IN SOT223
PDF  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

FZT853 数据表(HTML) 4 Page - Diodes Incorporated

  FZT853_15 Datasheet HTML 1Page - Diodes Incorporated FZT853_15 Datasheet HTML 2Page - Diodes Incorporated FZT853_15 Datasheet HTML 3Page - Diodes Incorporated FZT853_15 Datasheet HTML 4Page - Diodes Incorporated FZT853_15 Datasheet HTML 5Page - Diodes Incorporated FZT853_15 Datasheet HTML 6Page - Diodes Incorporated FZT853_15 Datasheet HTML 7Page - Diodes Incorporated  
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FZT853
Document Number DS33175 Rev. 5 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
FZT853
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
200
300
V
IC = 100µA
Collector-Emitter Breakdown Voltage
BVCER
200
300

V
IC = 1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
100
120
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
7
8.1
V
IE = 100µA
Collector Cut-Off Current
ICBO


<1

10
1
nA
µA
VCB = 150V
VCB = 150V, TA = +100°C
Collector Cut-Off Current
ICER


<1

10
1
nA
µA
VCB = 150V, RB ≤ 1kΩ
VCB = 150V, TA = +100°C
Emitter Cut-Off Current
IEBO
<1
10
nA
VEB = 6V
DC Current Gain (Note 9)
hFE
100
200
IC = 10mA, VCE = 2V
100
200
300
IC = 2A, VCE = 2V
50
100

IC = 4A, VCE = 2V
20
30

IC = 10A, VCE = 2V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
14
50
mV
IC = 100mA, IB = 5mA

100
150
IC = 2A, IB = 100mA
250
340
IC = 5A, IB = 500mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
1050
1250
mV
IC = 5A, IB = 500mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
900
1100
mV
IC = 5A, VCE = 2V
Current Gain-Bandwidth Product (Note 9)
fT
130
MHz
IC = 100mA, VCE = 10V,
f = 50MHz
Output Capacitance (Note 9)
Cobo
35
pF
VCB = 10V, f = 1MHz
Switching Times
ton

50
ns
IC = 1A, VCC = 10V,
IB1 = -IB2 = 100mA
toff

1650
Note:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%.



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