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STS8216 数据表(PDF) 2 Page - SamHop Microelectronics Corp.

部件名 STS8216
功能描述  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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制造商  SAMHOP [SamHop Microelectronics Corp.]
网页  http://www.samhop.com.tw
标志 SAMHOP - SamHop Microelectronics Corp.

STS8216 数据表(HTML) 2 Page - SamHop Microelectronics Corp.

  STS8216 Datasheet HTML 1Page - SamHop Microelectronics Corp. STS8216 Datasheet HTML 2Page - SamHop Microelectronics Corp. STS8216 Datasheet HTML 3Page - SamHop Microelectronics Corp. STS8216 Datasheet HTML 4Page - SamHop Microelectronics Corp. STS8216 Datasheet HTML 5Page - SamHop Microelectronics Corp. STS8216 Datasheet HTML 6Page - SamHop Microelectronics Corp. STS8216 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±10
uA
VGS(th)
0.5
V
m ohm
VGS=4.0V , ID=6A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=16V , VGS=0V
VGS= ±10V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
STS8216
Ver 1.0
0.8
1.5
gFS
23
S
VSD
CISS
470
pF
COSS
164
pF
CRSS
142
pF
Qg
17
nC
54
nC
Qgs
63
nC
Qgd
45
tD(ON)
10
ns
tr
2.1
ns
tD(OFF)
4.5
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=10V
ID=1A
VGS=4.0V
RGEN=10 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V , ID=6A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=2.5V , ID=5.2A
m ohm
c
f=1.0MHz
c
VDS=10V,ID=6A,
VGS=4.0V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.0A
0.79
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Sep,11,2009
2
_
IS
Maximum Continuous Drain-Source Diode Forward Current
2.0
A
b
17
20
20
27



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