MMBV105GL datasheet(1/2 Pages) LRC

部件名	MMBV105GL

功能描述	Silicon Tuning Diode

PDF	2 Pages

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制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

MMBV105GLT–1/2

1

3

2

CASE

318–08, STYLE 8

SOT– 23 (TO–236AB)

MMBV105GLT1

This device is designed in the surface Mount package for

general frequency control and tuning applications.It provides

solid-state reliability in replacement of mechanical

tuning methods.

•

Controlled and Uniform Tuning Ration

Silicon Tuning Diode

3

CATHODE

1

ANODE

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

Value

Unit

Reverse Voltage

V R

30

Vdc

Forward Current

I F

200

mAdc

Device Dissipation @T A = 25°C

P D

225

mW

Derate above 25°C

1.8

mW/°C

Junction Temperature

T J

+125

°C

Storage Temperature Range

T stg

–55 to +150

°C

DEVICE MARKING

MMBV105GLT1=M4E

ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

V (BR)R

30

—

Vdc

( I R=10

µAdc)

Reverse Voltage Leakage Current

I R

—

50

nAdc

( VR =28Vdc)

Min

Max

Typ

Min

Max

MMBV105GLT1

1.5

2.8

250

4.0

6.5

Device Type

C

T

V

R=25Vdc,f =1.0MHz

pF

Q

V

R=3.0Vdc

f=50MHz

C

R

C

3 /C 25

f=1.0MHz

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