MMBV609 datasheet(1/2 Pages) LRC

部件名	MMBV609

功能描述	Silicon Tuning Diode

PDF	2 Pages

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制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

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1 / 2 page

LESHAN RADIO COMPANY, LTD.

MMBV609LT1–1/2

1

3

2

CASE

318–08, STYLE 9

SOT– 23 (TO–236AB)

MMBV609LT1

This device is designed for FM tuning, general frequency control and

tuning, or any top–of–the–line application requiring back–to–back diode

configuration for minimum signal distortion and detuning. This device is

supplied in the SOT–23 plastic package for high volume, pick and place

assembly requirements.

• High Figure of Merit — Q = 450 (Typ) @ V

R = 3.0 Vdc, f = 50 MHz

• Guaranteed Capacitance Range

• Dual Diodes – Save Space and Reduce Cost

• Surface Mount Package

• Available in 8 mm Tape and Reel

• Monolithic Chip Provides Improved Matching

• Hyper Abrupt Junction Process Provides High Tuning Ratio

Silicon Tuning Diode

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

Value

Unit

Reverse Voltage

V R

20

Vdc

Forward Current

I F

100

mAdc

Device Dissipation @T A = 25°C

P D

225

mW

Derate above 25°C

1.8

mW/°C

Junction Temperature

T J

+125

°C

Storage Temperature Range

T stg

–55 to +150

°C

DEVICE MARKING

MMBV609LT1=5L

ELECTRICAL CHARACTERISTICS(T A=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

M a x

Unit

Reverse Breakdown Voltage

V (BR)R

20

—

Vdc

(IR=10

µAdc)

Reverse Voltage Leakage Current

I R

—

10

nAdc

(VR=15Vdc)

Diode Capacitance

C T

26

—

32

pF

(VR=3.0 Vdc,f=1.0MHz)

Capacitance Ratio C3/C8

C R

1.8

—

2.4

—

(f=1.0MHz)

Figure of Merit

Q

250

450

—

(VR=3.0 Vdc, f=50MHz)

DUAL

VOLTAGE VARIABLE

CAPACITANCE DIODE

3

1

2

类似零件编号 - MMBV609

制造商	部件名	数据表	功能描述
ON Semiconductor	MMBV609LT1	36Kb / 4P	Silicon Tuning Diode November, 2001 ??Rev. 2
	MMBV609LT1	46Kb / 3P	Silicon Tuning Diode January, 2006 ??Rev. 3
	MMBV609LT1G	46Kb / 3P	Silicon Tuning Diode January, 2006 ??Rev. 3
	MMBV609LT1	46Kb / 3P	Silicon Tuning Diode January, 2006 ??Rev. 3

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