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BCV47TC 数据表(PDF) 3 Page - Diodes Incorporated |
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BCV47TC 数据表(HTML) 3 Page - Diodes Incorporated |
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3 / 5 page ![]() BCV47 Document number: DS33001 Rev. 4 - 2 3 of 5 www.diodes.com December 2012 © Diodes Incorporated BCV47 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 80 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO 60 — — V ICEO = 10mA Emitter-Base Breakdown Voltage BVEBO 10 — — V IEBO = 10µA Collector cut-off current ICBO — — <1 — 100 10 nA µA VCB = 60V VCB = 60V, TA = +150°C Emitter-base Cut-off Current IEBO — <1 100 nA VEB = 4V ON CHARACTERISTICS (Note 9) Static Forward Current Transfer Ratio hFE 2,000 4,000 10,000 2,000 — — — IC = 100µA, VCE = 1V IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V IC = 500mA, VCE = 5V Collector-Emitter Saturation Voltage VCE(sat) — — 1.0 V IC = 100mA, IB = 0.1mA Base-Emitter Saturation Voltage VBE(sat) — — 1.5 V IC = 100mA, IB = 0.1mA SMALL SIGNAL CHARACTERISTICS (Note 9) Transition Frequency fT — 170 — MHz IC = 50mA, VCE = 5V, f = 20MHz Output Capacitance Cobo — 3.5 — pF VCB = 10V, f = 1MHz Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% |
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