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STUD412S 数据表(PDF) 2 Page - SamHop Microelectronics Corp.

部件名 STUD412S
功能描述  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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制造商  SAMHOP [SamHop Microelectronics Corp.]
网页  http://www.samhop.com.tw
标志 SAMHOP - SamHop Microelectronics Corp.

STUD412S 数据表(HTML) 2 Page - SamHop Microelectronics Corp.

  STUD412S Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD412S Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD412S Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD412S Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD412S Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD412S Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD412S Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD412S Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±10
uA
VGS(th)
1
V
21
gFS
15
S
VSD
CISS
470
pF
COSS
91
pF
CRSS
53
pF
Qg
8
nC
12
nC
Qgs
18
nC
Qgd
19
tD(ON)
7.6
ns
tr
1.4
ns
tD(OFF)
2.2
ns
tf
ns
Gate-Drain Charge
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=20V,ID=11A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=11A
VDS=10V , ID=11A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
a
3
VGS=4.5V , ID=9A
26
30
40
m ohm
b
f=1.0MHz
b
VDS=20V,ID=11A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.0A
0.79
1.3
V
Notes
a.Surface Mounted on FR4 Board,t<10 sec.
b.Pulse Test:Pulse Width < 300us, Duty Ctcle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,RG=25
Ω,VDD=20V,VGS=10V .(See Figure13)
_
_
STU/D412S
Ver 1.0
www.samhop.com.tw
Aug,07,2008
2
IS
Maximum Continuous Drain-Source Diode Forward Current
2.0
A
1.8
VDS=20V,ID=11A,VGS=4.5V
4
nC
_



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