MSD602-RT1 datasheet(1/1 Pages) LRC

部件名	MSD602-RT1

功能描述	NPN General Purpose Amplifier Transistor Surface Mount

PDF	1 Pages

Scroll/Zoom	100%

制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

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1 / 1 page

LESHAN RADIO COMPANY, LTD.

N7–1/1

MSD602–RT1

NPN General Purpose Amplifier

Transistor Surface Mount

3

CASE

318D–03, STYLE1

SC–59

1

2

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

60

Vdc

Collector-Emitter Voltage

V(BR)CEO

50

Vdc

Emitter-Base Voltage

V(BR)EBO

7.0

Vdc

Collector Current–Continuous

IC

500

mAdc

Collector Current–Peak

IC(P)

1.0

Adc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Power Dissipation

P D

200

mW

Junction Temperature

T J

150

°C

Storage Temperature

T stg

–55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T A = 2

5°C)

Characteristic

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0)

V(BR)CEO

50

—

Vdc

Collector-Base Breakdown Voltage (I C = 10

µAdc, I

E = 0)

V(BR)CBO

60

—

Vdc

Emitter-Base Breakdown Voltage (I E = 10

µAdc, I

C = 0)

V(BR)EBO

7.0

—

Vdc

Collector-Base Cutoff Current (V CB = 20Vdc, I E = 0)

I CBO

—

0.1

µAdc

DC Current Gain (1)

—

(V CE = 10 Vdc, I C = 150 mAdc)

hFE1

120

240

(V CE = 10 Vdc, I C = 500 mAdc)

hFE2

40

—

Collector-Emitter Saturation Voltage (I C = 300 mAdc, I B = 30 mAdc)

VCE(sat)

—

0.6

Vdc

Output Capacitance(VCB=10Vdc,IE=0,f=1.0MHz)

Cob

—15

pF

1. Pulse Test: Pulse Width < 300

µs, D.C < 2%.

DEVICE MARKING

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

Marking Symbol

WRX

COLLECTOR

3

2

1

BASE

EMITTER

类似零件编号 - MSD602-RT1

制造商	部件名	数据表	功能描述
ON Semiconductor	MSD602-RT1	111Kb / 4P	NPN General Purpose Amplifier Transistor Surface Mount 1996 REV 1
E-Tech Electronics LTD	MSD602-RT1	78Kb / 1P	NPN General Purpose Amplifier Transistor Surface Mount
ON Semiconductor	MSD602-RT1G	89Kb / 3P	NPN General Purpose Amplifier Transistor Surface Mount July, 2012 ??Rev. 7
	MSD602-RT1G	63Kb / 5P	NPN General Purpose Amplifier Transistor Surface Mount August, 2014 ??Rev. 10
	MSD602-RT1G	63Kb / 5P	NPN General Purpose Amplifier Transistor Surface Mount August, 2014 ??Rev. 10

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类似说明 - MSD602-RT1

制造商	部件名	数据表	功能描述
ON Semiconductor	MSD602-RT1	111Kb / 4P	NPN General Purpose Amplifier Transistor Surface Mount 1996 REV 1
E-Tech Electronics LTD	MSD602	78Kb / 1P	NPN General Purpose Amplifier Transistor Surface Mount
ON Semiconductor	2SC4617	48Kb / 4P	NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT July, 2004 ??Rev. 4
NTE Electronics	NTE2646	57Kb / 2P	Silicon NPN Transistor General Purpose Amplifier, Switch Surface Mount
ON Semiconductor	2SC4081RT1	48Kb / 2P	General Purpose Amplifier Transistor NPN Surface Mount May, 2006 ??Rev. 4
OPTEK Technologies	2N2222AUA	192Kb / 3P	Surface Mount NPN General Purpose Transistor
Leshan Radio Company	LMSD1819A-RT1G	89Kb / 4P	General Purpose Amplifier Transistor NPN Silicon Surface Mount
ON Semiconductor	MSD602-RT1G	89Kb / 3P	NPN General Purpose Amplifier Transistor Surface Mount July, 2012 ??Rev. 7
ON Semiconductor	MSD602-RT1G	63Kb / 5P	NPN General Purpose Amplifier Transistor Surface Mount August, 2014 ??Rev. 10
TT Electronics.	2N2222AUB	254Kb / 3P	Surface Mount NPN General Purpose Transistor