DMN2016LHAB datasheet(4/6 Pages) DIODES

4 / 6 page

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

4 of 6

www.diodes.com

July 2014

DMN2016LHAB

1214

16 1820

1,000

100

1,000

V , DRAIN-SOURCE VOLTAGE (V)

Figure 7 Typical Junction Capacitance

Ciss

Coss

Crss

f = 1MHz

Q(nC)

g, TOTAL GATE CHARGE

Figure 8 Gate Charge

V= 10V

I= A

0.1

100

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 SOA, Safe Operation Area

100

0.1

0.01

Limited

DS(on)

= 150°C

T = 25°C

J(max)

= 12V

Single Pulse

DUT on 1 * MRP Board

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

0.1

100

V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 SOA, Safe Operation Area

100

0.1

0.01

Limited

DS(on)

= 150°C

T = 60°C

J(max)

= 12V

Single Pulse

DUT on 1 * MRP Board

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

0.001

0.01

0.1

(t) = r(t) * R

= 100°C/W

Duty Cycle, D = t1/ t2

θθ

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

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