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WFF8N60 数据表(PDF) 1 Page - Wisdom technologies Int`l |
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WFF8N60 数据表(HTML) 1 Page - Wisdom technologies Int`l |
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1 / 6 page  HIGH VOLTAGE N-Channel MOSFET Rev.A0,August , 2010 | 1 WFF8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO‐220F G‐Gate,D‐Drain,S‐Sourse □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.32 Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol Parameter WFF8 VDSS Drain-Sourse Voltage 600 V ID Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) 4.7* A VGS Gate-Sourse Voltage ± 30 V EAS Single Plused Avanche Energy (Note1) 420 mJ IAR Avalanche Current (Note2) 7.5 A PD Power Dissipation (Tc=25℃) 48 W TJ,TSTG Operating and Storage Temperature Range -55 ~ +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Typ. Max Units RθJC Thermal Resistance,Junction to Case -- 2.6 ℃ /W RθJA Thermal Resistance,Junction to Ambient -- 62.5 ℃ /W * Drain current limited by maximum junction temperature. 7.5* A G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G N60 Units www.wisdom-technologies.com |
类似零件编号 - WFF8N60 |
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类似说明 - WFF8N60 |
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