CMPT4401 NPN

CMPT4403 PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT4401 and

CMPT4403 are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

small signal general purpose amplifier and switching

applications.

MARKING CODES: CMPT4401: C2X

CMPT4403: C2T

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

CMPT4401

CMPT4403

UNITS

Collector-Base Voltage

VCBO

60

40

V

Collector-Emitter Voltage

VCEO

40

40

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Continuous Collector Current

IC

600

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPT4401

CMPT4403

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=35V, VEB=0.4V

-

0.1

-

0.1

μA

IBEV

VCE=35V, VEB=0.4V

-

0.1

-

0.1

μA

BVCBO

IC=100μA

60

-

40

-

V

BVCEO

IC=1.0mA

40

-

40

-

V

BVEBO

IE=100μA

6.0

-

5.0

-

V

VCE(SAT)

IC=150mA, IB=15mA

-

0.40

-

0.40

V

VCE(SAT)

IC=500mA, IB=50mA

-

0.75

-

0.75

V

VBE(SAT)

IC=150mA, IB=15mA

0.75

0.95

0.75

0.95

V

VBE(SAT)

IC=500mA, IB=50mA

-

1.2

-

1.3

V

hFE

VCE=1.0V, IC=0.1mA

20

-

30

-

hFE

VCE=1.0V, IC=1.0mA

40

-

60

-

hFE

VCE=1.0V, IC=10mA

80

-

100

-

SOT-23 CASE

R5 (1-February 2010)

www.centr a lsemi.com