CMPT6428

CMPT6429

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6428 and

CMPT6429 are NPN Silicon Transistors manufactured

by the epitaxial planar process, epoxy molded in

a surface mount package, designed for high gain

amplifier applications.

MARKING CODES: CMPT6428: C1K

CMPT6429: C1L

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

CMPT6428

CMPT6429

UNITS

Collector-Base Voltage

VCBO

60

55

V

Collector-Emitter Voltage

VCEO

50

45

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

200

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPT6428

CMPT6429

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=30V

-

10

-

10

nA

ICEO

VCE=30V

-

100

-

100

nA

IEBO

VBE=5.0V

-

10

-

10

nA

BVCBO

IC=100µA

60

-

55

-

V

BVCEO

IC=1.0mA

50

-

45

-

V

VCE(SAT)

IC=10mA, IB=0.5mA

-

0.20

-

0.20

V

VCE(SAT)

IC=100mA, IB=5.0mA

-

0.60

-

0.60

V

VBE(ON)

VCE=5.0V, IC=1.0mA

0.56

0.66

0.56

0.66

V

hFE

VCE=5.0V, IC=10µA

250

-

500

-

hFE

VCE=5.0V, IC=100µA

250

650

500

1250

hFE

VCE=5.0V, IC=1.0mA

250

-

500

-

hFE

VCE=5.0V, IC=10mA

250

-

500

-

fT

VCE=5.0V, IC=1.0mA, f=100MHz

100

700

100

700

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

-

3.0

-

3.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

-

8.0

-

8.0

pF

SOT-23 CASE

R5 (1-February 2010)

www.centra lsemi.com