CMPT6517 NPN

CMPT6520 PNP

SURFACE MOUNT

COMPLEMENTARY HIGH VOLTAGE

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6517 and

CMPT6520 are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for high

voltage driver and amplifier applications.

MARKING CODES: CMPT6517: C1Z

CMPT6520: C2Z

SOT-23 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

350

V

Collector-Emitter Voltage

VCEO

350

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

500

mA

Continuous Base Current

IB

250

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=250V

50

nA

IEBO

VEB=5.0V (CMPT6517)

50

nA

IEBO

VEB=4.0V (CMPT6520)

50

nA

BVCBO

IC=100µA

350

V

BVCEO

IC=1.0mA

350

V

BVEBO

IE=10µA (CMPT6517)

6.0

V

BVEBO

IE=10µA (CMPT6520)

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.30

V

VCE(SAT)

IC=20mA, IB=2.0mA

0.35

V

VCE(SAT)

IC=30mA, IB=3.0mA

0.50

V

VCE(SAT)

IC=50mA, IB=5.0mA

1.0

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.75

V

VBE(SAT)

IC=20mA, IB=2.0mA

0.85

V

VBE(SAT)

IC=30mA, IB=3.0mA

0.90

V

VBE(ON)

IC=10V, IC=100mA

2.0

V

hFE

VCE=10V, IC=1.0mA

20

hFE

VCE=10V, IC=10mA

30

R5 (1-February 2010)

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