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WFP8N60 数据表(PDF) 3 Page - Wisdom technologies Int`l

部件名 WFP8N60
功能描述  600V N-Channel MOSFET
PDF  6 Pages
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制造商  WISDOM [Wisdom technologies Int`l]
网页  http://www.wisdom-technologies.com/index.aspx
标志 WISDOM - Wisdom technologies Int`l

WFP8N60 数据表(HTML) 3 Page - Wisdom technologies Int`l

  WFP8N60 Datasheet HTML 1Page - Wisdom technologies Int`l WFP8N60 Datasheet HTML 2Page - Wisdom technologies Int`l WFP8N60 Datasheet HTML 3Page - Wisdom technologies Int`l WFP8N60 Datasheet HTML 4Page - Wisdom technologies Int`l WFP8N60 Datasheet HTML 5Page - Wisdom technologies Int`l WFP8N60 Datasheet HTML 6Page - Wisdom technologies Int`l  
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HIGH VOLTAGE
N-Channel MOSFET 
 
 
   Rev.A0,August , 2010 | 
 
Typical Characteristics
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS = 300V
V
DS = 120V
V
DS = 480V
Note : I
D = 8A
Q
G, Total Gate Charge [nC]
0.20.4
0.60.8
1.01.2
1.4
10
-1
10
0
10
1
150℃
Notes :
1. V
GS = 0V
2. 250µs Pulse Test
25℃
V
SD, Source-Drain voltage [V]
0
5
10
15
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS = 20V
V
GS = 10V
Note : T
J = 25
I
D, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top:
15.0 V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0 V
Notes :
1. 250µs PulseTest
2. T
C = 25℃
V
DS, Drain-Source Voltage [V]
246
8
10
10
-1
10
0
10
1
150
oC
25
oC
-55
oC
Notes :
1. V
DS = 40V
2. 250µs Pulse Test
V
GS, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
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