MPQ6002

MPQ6502

SILICON QUAD

COMPLEMENTARY TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPQ6002 and

MPQ6502 types are silicon complementary pair transistors,

mounted in a 14 pin DIP package, designed for general

purpose amplifier and switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

500

mA

Power Dissipation (per transistor)

PD

650

mW

Power Dissipation (total package)

PD

1.25

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (total package)

ΘJA

100

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=50V

30

nA

IEBO

VEB=3.0V

30

nA

BVCBO

IC=10μA

60

V

BVCEO

IC=10mA

30

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=150mA, IB=15mA

0.4

V

VCE(SAT)

IC=300mA, IB=30mA

1.4

V

VBE(SAT)

IC=150mA, IB=15mA

1.3

V

VBE(SAT)

IC=300mA, IB=30mA

2.0

V

hFE

VCE=10V, IC=1.0mA

50

hFE

VCE=10V, IC=10mA

75

hFE

VCE=10V, IC=150mA

100

hFE

VCE=10V, IC=300mA

30

fT

VCE=20V, IC=50mA, f=100MHz

200

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

8.0

pF

Cib

VEB=2.0V, IC=0, f=1.0MHz

30

pF

ton

VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA

30

ns

toff

VCC=30V, IC=150mA, IB1=IB2=15mA

225

ns

TO-116 CASE

R1 (8-April 2013)

www.centr a lsemi.com